[1] Q. J. Wang, H. S. Zhang,* L. Shi, and J. Gong.* Origin of Ga vacancy-related YL center in n-type GaN: A first-principles study. Journal of Luminescence, 2023, 255, 119561. [2] H. S. Zhang, L. Shi.* Z. H. Liu, G. Z. Xu, W. T. Song, Y. K. Wang, Z. J. Xu, X. B. Yang, Y. J. Zhao, X. L. Yang, B. Shen, L. W. Wang,* and K. Xu.* Theoretical simulation and experimental verification of the competition between different recombination channels in GaN semiconductors. Journal of Materials Chemistry C, 2022, 10(36), 13191. [3] H. S. Zhang, J. Gong,* and L. Shi.* Antisite Defect SiC as a Source of the DI Center in 4H-SiC. Physica Status Solidi– Rapid Research Letters, 2023, 17, 2200239 [4] S. Wu, X. L Yang,* H. S. Zhang, L. Shi, Q. Zhang, Q. Shang, Z. Qi, Y. Xu, J. Zhang, N. Tang, X. Wang, W. Ge, K. Xu, and B. Shen.* Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN. Physical Review Letters, 2018, 121(14), 145505. [5] H. S. Zhang, L. Shi,* X. B. Yang, Y. J. Zhao, K. Xu, and L. W. Wang.* First-Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: The Example of Yellow Luminance by GaN: CN+ON and GaN:CN. Advanced Optical Materials, 2017, 5(21), 1700404. [6] H. S. Zhang, F. Kang, Y. J. Zhao, M. Peng, D. Y. Lei, and X. B. Yang.* The role of oxygen defects in a bismuth doped ScVO4 matrix: tuning luminescence by hydrogen treatment. Journal of Materials Chemistry C, 2017, 5(2), 314. [7] Tingting Shi,* H. S. Zhang, Weiwei Meng, Qiang Teng, Meiyue Liu, Xiaobao Yang, Yanfa Yan, Hin-Lap Yip* and Yu-Jun Zhao.* Effects of Organic Cations on the Defect Physics of Tin Halide Perovskites. Journal of Materials Chemistry A, 2017,5,15124 |
